Datasheet > PSMN1R5-25MLH

PSMN1R5-25MLH

更新时间： 2024-09-17 11:14:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	296K
描述
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technologyProduction

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PSMN1R5-25MLH 数据手册

PSMN1R5-25MLH

N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in

LFPAK33 using NextPowerS3 technology

30 September 2019

Product data sheet

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 technology delivers low R_DSon, low I_DSSleakage and high efficiency. Rated to 150 A

and optimized with low gate resistance (R_G) for fast-switching applications.

2. Features and benefits

•

Optimized for low R_DSonand low gate resistance (R_G)

•

Fast switching – reduced switching losses

Strong linear-mode (SOA) rating

Low leakage < 1 µA at 25 °C

Low spiking and ringing for low EMI designs

Optimized for 4.5 V gate drive

150 A continuous I_D(max)rating

High reliability copper-clip bonded and solder die attach LFPAK33 package

Qualified to 175 °C

Exposed leads for optimal visual solder inspection

3. Applications

•

Synchronous buck regulator

Synchronous rectifier in AC-DC and DC-DC applications

BLDC (brushless) motor control

eFuse and battery protection

OR-ing and hot-swap

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

150

106

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

1.46

2.1

1.81

2.7

mΩ

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

I_D= 25 A; V_DS= 12 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

5.6

11.2

Q_G(tot)

7.7

12 3 4 5 6 7...12

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