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PSMN1R7-25YLC PDF预览

PSMN1R7-25YLC

更新时间: 2024-09-16 10:00:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
15页 340K
描述
N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology

PSMN1R7-25YLC 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-G4针数:235
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76Is Samacsys:N
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):149 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-235JESD-30 代码:R-PSSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):894 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PSMN1R7-25YLC 数据手册

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PSMN1R7-25YLC  
AK  
LFP  
N-channel 25 V 1.9 mlogic level MOSFET in LFPAK using  
NextPower technology  
Rev. 01 — 2 May 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is  
designed and qualified for use in a wide range of industrial, communications and domestic  
equipment.  
1.2 Features and benefits  
„ High reliability Power SO8 package,  
„ Optimised for 4.5V Gate drive utilising  
qualified to 175°C  
NextPower Superjunction technology  
„ Low parasitic inductance and  
„ Ultra low QG, QGD and QOSS for high  
system efficiencies at low and high  
loads  
resistance  
1.3 Applications  
„ DC-to-DC converters  
„ Lithium-ion battery protection  
„ Load switching  
„ Power OR-ing  
„ Server power supplies  
„ Sync rectifier  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
VDS  
ID  
drain-source voltage  
25 °C Tj 175 °C  
-
-
-
-
25  
V
A
[1]  
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1  
100  
Ptot  
Tj  
total power dissipation  
junction temperature  
Tmb = 25 °C; see Figure 2  
-
-
-
164  
W
-55  
175 °C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 4.5 V; ID = 25 A;  
Tj = 25 °C; see Figure 12  
-
-
2
2.5  
mΩ  
mΩ  
VGS = 10 V; ID = 25 A;  
1.55 1.9  
Tj = 25 °C; see Figure 12  

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