是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PSSO-G4 | 针数: | 235 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 149 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 25 V | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.0025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-235 | JESD-30 代码: | R-PSSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 894 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN1R7-25YLC,115 | NXP |
获取价格 |
PSMN1R7-25YLC - N-channel 25 V 1.9 mΩ logic l | |
PSMN1R7-25YLD | NXP |
获取价格 |
POWER, FET | |
PSMN1R7-25YLD | NEXPERIA |
获取价格 |
N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technolog | |
PSMN1R7-30YL | NXP |
获取价格 |
N-channel TrenchMOS logic level FET | |
PSMN1R7-30YL | NEXPERIA |
获取价格 |
N-channel 30 V 1.7 mΩ logic level MOSFET in L | |
PSMN1R7-30YL,115 | NXP |
获取价格 |
PSMN1R7-30YL - N-channel 30 V 1.7 mΩ logic le | |
PSMN1R7-30YL_10 | NXP |
获取价格 |
N-channel 30 V 1.7 mΩ logic level MOSFET in L | |
PSMN1R7-30YL_11 | NXP |
获取价格 |
N-channel 30 V 1.7 mΩ logic level MOSFET in L | |
PSMN1R7-40YLB | NEXPERIA |
获取价格 |
N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 | |
PSMN1R7-40YLD | NEXPERIA |
获取价格 |
N-channel 40 V, 1.8 mΩ, 200 A logic level MOS |