Datasheet > PSMN1R7-25YLC,115

PSMN1R7-25YLC,115

更新时间： 2024-11-06 19:53:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	337K
描述
PSMN1R7-25YLC - N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology SOIC 4-Pin

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技术参数
数据手册

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PSMN1R7-25YLC,115 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SOIC
针数：	4	Reach Compliance Code：	not_compliant
风险等级：	5.83	Base Number Matches：	1

PSMN1R7-25YLC,115 数据手册

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PSMN1R7-25YLC

LFP

N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 01 — 2 May 2011

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

High reliability Power SO8 package,

Optimised for 4.5V Gate drive utilising

qualified to 175°C

NextPower Superjunction technology

Low parasitic inductance and

Ultra low QG, QGD and QOSS for high

system efficiencies at low and high

loads

resistance

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Power OR-ing

Server power supplies

Sync rectifier

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

V_DS

I_D

drain-source voltage

25 °C ≤ T_j≤ 175 °C

[1]

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

100

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

164

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A;

T_j= 25 °C; see Figure 12

2.5

mΩ

V_GS= 10 V; I_D= 25 A;

1.55 1.9

T_j= 25 °C; see Figure 12

12 3 4 5 6 7...15

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