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PSMN1R6-30PL127 PDF预览

PSMN1R6-30PL127

更新时间: 2024-11-06 11:54:03
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 225K
描述
N-channel 30 V 1.7 mΩ logic level MOSFET

PSMN1R6-30PL127 数据手册

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PSMN1R6-30PL  
N-channel 30 V 1.7 mlogic level MOSFET  
Rev. 02 — 25 June 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is  
designed and qualified for use in a wide range of industrial, communications and domestic  
equipment.  
1.2 Features and benefits  
„ High efficiency due to low switching  
„ Suitable for logic level gate drive  
and conduction losses  
sources  
1.3 Applications  
„ DC-to-DC converters  
„ Load switiching  
„ Motor control  
„ Server power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
30  
V
A
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1;  
[1]  
100  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
-
-
306  
W
Dynamic characteristics  
QGD  
gate-drain charge  
VGS = 4.5 V; ID = 25 A;  
VDS = 15 V; see Figure 14;  
see Figure 15  
-
-
27  
-
-
nC  
nC  
QG(tot)  
total gate charge  
VGS = 4.5 V; ID = 25 A;  
101  
VDS = 15 V; see Figure 14  
Static characteristics  
RDSon  
drain-source  
on-state resistance  
VGS = 10 V; ID = 25 A;  
Tj = 25 °C;  
[2]  
-
1.4  
1.7  
mΩ  
[1] Continuous current is limited by package.  
[2] Measured 3 mm from package.  

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