Datasheet > PSMN1R6-40YLC,115

PSMN1R6-40YLC,115

更新时间： 2024-09-16 22:59:31

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描述
MOSFET N-CH 40V 100A LFPAK-SO8

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PSMN1R6-40YLC

N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using

NextPower technology

22 August 2012

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

High reliability Power SO8 package, qualified to 150°C

•

Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

Ultra low Rdson and low parasitic inductance

1.3 Applications

DC-to-DC converters

Load switching

Power OR-ing

Server power supplies

Sync rectifier

•

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 150 °C

T_mb= 25 °C; V_GS= 10 V; Fig. 1

[1]

100

288

150

P_tot

T_j

total power dissipation T_mb= 25 °C; Fig. 2

junction temperature

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

1.45

1.25

1.8

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

1.55

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 4.5 V; I_D= 25 A; V_DS= 20 V;

Fig. 14

15.3

12 3 4 5 6 7...14

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