Datasheet > PSMN1R6-30MLH

PSMN1R6-30MLH

更新时间： 2024-11-07 11:13:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	299K
描述
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technologyProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PSMN1R6-30MLH 数据手册

PSMN1R6-30MLH

N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in

LFPAK33 using NextPowerS3 technology

12 November 2019

Product data sheet

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 technology delivers low R_DSon, low I_DSSleakage and high efficiency. Rated to 160 A

and optimized for DC load switch and hot-swap applications.

2. Features and benefits

•

Optimized for low R_DSon

•

Low leakage < 1 µA at 25 °C

Low spiking and ringing for low EMI designs

Optimized for 4.5 V gate drive

160 A rated

High reliability copper-clip bonded and solder die attach LFPAK33 package

Qualified to 175 °C

Exposed leads for optimal visual solder inspection

3. Applications

•

DC switch / load switch

USB-PD and fast-charge

Battery protection

OR-ing and hot-swap

Synchronous rectifier in AC-DC and DC-DC applications

Brushed and BLDC (brushless) motor control

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

160

106

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

1.6

1.9

2.6

mΩ

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

Dynamic characteristics

Q_GDgate-drain charge

I_D= 25 A; V_DS= 15 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

1.3

12 3 4 5 6 7...12

中文翻译

下载PDF

与PSMN1R6-30MLH相关器件

型号	品牌	获取价格	描述	数据表
PSMN1R6-30PL	NXP	获取价格	N-channel 30 V 1.7 mΩ logic level MOSFET
PSMN1R6-30PL127	NXP	获取价格	N-channel 30 V 1.7 mÎ© logic level MOSFET
PSMN1R6-40YLC	NXP	获取价格	N-channel 40 V 1.55 mÎ© logic level MOSFET in
PSMN1R6-40YLC,115	ETC	获取价格	MOSFET N-CH 40V 100A LFPAK-SO8
PSMN1R6-40YLC:115	ETC	获取价格	MOSFET N-CH 40V 100A POWERSO8-4
PSMN1R7-25YLC	NXP	获取价格	N-channel 25 V 1.9 mΩ logic level MOSFET in L
PSMN1R7-25YLC,115	NXP	获取价格	PSMN1R7-25YLC - N-channel 25 V 1.9 mΩ logic l
PSMN1R7-25YLD	NXP	获取价格	POWER, FET
PSMN1R7-25YLD	NEXPERIA	获取价格	N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technolog
PSMN1R7-30YL	NXP	获取价格	N-channel TrenchMOS logic level FET