Datasheet > PSMN1R5-30YLC,115

PSMN1R5-30YLC,115

更新时间： 2024-11-05 22:59:07

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其他 - ETC		开关脉冲晶体管
页数	文件大小	规格书
14页	323K
描述
MOSFET N-CH 30V 100A LFPAK

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PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using

NextPower technology

3 June 2021

Product data sheet

1. General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed

and qualified for use in a wide range of industrial, communications and domestic equipment.

2. Features and benefits

•

High reliability Power SO8 package, qualified to 175°C

•

Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

Ultra low Rdson and low parasitic inductance

3. Applications

•

DC-to-DC converters

Lithium-ion battery protection

Load switching

Power OR-ing

Server power supplies

Sync rectifier

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

200

179

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

1.65

1.3

2.05

1.55

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

Dynamic characteristics

Q_GD

gate-drain charge

I_D= 25 A; V_DS= 15 V; V_GS= 4.5 V;

Fig. 14; Fig. 15

8.6

Q_G(tot)

total gate charge

I_D= 25 A; V_DS= 15 V; V_GS= 10 V;

Fig. 14; Fig. 15

[1] 200A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

12 3 4 5 6 7...14

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