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PSMN1R2-30YLD PDF预览

PSMN1R2-30YLD

更新时间: 2024-11-07 11:15:31
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 305K
描述
N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 TechnologyProduction

PSMN1R2-30YLD 数据手册

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PSMN1R2-30YLD  
N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in  
LFPAK56 using NextPowerS3 Technology  
21 December 2018  
Product data sheet  
1. General description  
250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.  
NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high  
efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky  
or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly  
suited to high efficiency applications at high switching frequencies.  
2. Features and benefits  
250 A capability  
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching  
frequencies  
Superfast switching with soft-recovery; s-factor > 1  
Low spiking and ringing for low EMI designs  
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C  
Optimised for 4.5 V gate drive  
Low parasitic inductance and resistance  
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,  
qualified to 175 °C  
Wave solderable; exposed leads for optimal visual solder inspection  
3. Applications  
On-board DC-to-DC solutions for server and telecommunications  
Secondary-side synchronous rectification in telecommunication applications  
Voltage regulator modules (VRM)  
Point-of-Load (POL) modules  
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components  
Brushed and brushless motor control  
Power OR-ing  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
ID  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
Unit  
V
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
VGS = 10 V; Tmb = 25 °C; Fig. 2  
-
-
-
-
-
[1]  
-
250  
194  
175  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
junction temperature  
-
W
Tj  
-55  
°C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;  
Fig. 10  
-
1.2  
1.6  
mΩ  
 
 
 
 

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