Datasheet > PSMN1R2-55SLH

PSMN1R2-55SLH

更新时间： 2024-11-07 11:13:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	312K
描述
N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88Production

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PSMN1R2-55SLH 数据手册

PSMN1R2-55SLH

N-channel 55 V, 1.03 mOhm, 330 A logic level Application

Specific MOSFET in LFPAK88

28 February 2022

Product data sheet

1. General description

330 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in

175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family

and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking

performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode

but without problematic high leakage current. The ASFET is particularly suited to 36 V battery

powered applications requiring strong avalanche capability, linear mode performance, use at high

switching frequencies, and also safe and reliable switching at high load-current.

2. Features and benefits

•

330 Amp continuous current capability

•

LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability,

optimum soldering and easy solder-joint inspection

Copper-clip and solder die attach for low package inductance and resistance, and high I_D(max)

rating

•

Ideal replacement for D2PAK and 10 x 12 mm leadless package types

Qualified to 175 °C

Avalanche rated, 100 % tested

Low Q_G, Q_GDand Q_OSSfor high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for

low EMI designs

•

Unique “SchottkyPlus” technology for Schottky-like switching performance and low I_DSSleakage

Narrow V_GS(th)rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at

high-current conditions

3. Applications

•

Brushless DC motor control

Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies

Battery protection

eFuse and load switch

Hotswap / in-rush current management

10 cell lithium-ion battery applications (36 V ‒ 42 V)

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

330

375

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

12 3 4 5 6 7...12

中文翻译

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