Datasheet > PSMN1R2-25YLD

PSMN1R2-25YLD

更新时间： 2024-11-07 11:15:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	309K
描述
N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 TechnologyProduction

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PSMN1R2-25YLD 数据手册

PSMN1R2-25YLD

N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in

LFPAK56 using NextPowerS3 Technology

23 April 2021

Product data sheet

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high

efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky

or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly

suited to high efficiency applications at high switching frequencies.

2. Features and benefits

•

100% Avalanche tested at I_(AS)= 169 A

•

Ultra low Q_G, Q_GDand Q_OSSfor high system efficiency, especially at higher switching

frequencies

•

Superfast switching with soft-recovery

Low spiking and ringing for low EMI designs

Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C

Optimised for 4.5 V gate drive

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,

qualified to 175 °C

•

Wave solderable; exposed leads for optimal visual solder inspection

3. Applications

•

On-board DC:DC solutions for server and telecommunications

Secondary-side synchronous rectification in telecommunication applications

Voltage regulator modules (VRM)

Point-of-Load (POL) modules

Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

Brushed and brushless motor control

Power OR-ing

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

230

172

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

1.4

1.69

mΩ

12 3 4 5 6 7...14

中文翻译

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