Datasheet > PSMN1R1-40BS

PSMN1R1-40BS

更新时间： 2024-09-17 11:16:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	969K
描述
N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAKProduction

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PSMN1R1-40BS 数据手册

PSMN1R1-40BS

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

Rev. 2 — 29 February 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 °C. This

product is designed and qualified for use in a wide range of industrial, communications

and domestic equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC convertors

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

[1]

I_D

120

306

175

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

see Figure 12;see Figure 13

1.68

1.16

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 13

1.3

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 75 A; V_DS= 20 V;

see Figure 14;see Figure 15

Q_G(tot)

136

Avalanche ruggedness

E_DS(AL)Snon-repetitive

V_GS= 10 V; T_j(init)= 25 °C; I_D= 120 A;

V_sup≤ 40 V; unclamped; R_GS= 50 Ω;

t_p= 0.1 ms

1.4

drain-source

avalanche energy

[1] Continuous current is limited by package

12 3 4 5 6 7...14

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