Datasheet > PSMN1R1-30EL,127

PSMN1R1-30EL,127

更新时间： 2024-09-16 20:45:27

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
13页	246K
描述
PSMN1R1-30EL - N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK TO-262 3-Pin

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技术参数
数据手册

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PSMN1R1-30EL,127 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-262
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.75	Base Number Matches：	1

PSMN1R1-30EL,127 数据手册

PSMN1R1-30EL

N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK

2 April 2014

Product data sheet

1. General description

Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

2. Features and benefits

High efficiency due to low switching and conduction losses

Suitable for logic level gate drive sources

•

3. Applications

DC-to-DC converters

Load switiching

Motor control

•

Server power supplies

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; Fig. 2

[1]

[2]

120

338

175

P_tot

T_j

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

1.1

1.5

1.3

1.8

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

Fig. 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 4.5 V; I_D= 75 A; V_DS= 15 V;

Fig. 14; Fig. 15

Q_G(tot)

118

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