Datasheet > PSMN1R1-30YLE

PSMN1R1-30YLE

更新时间： 2024-11-07 11:10:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	313K
描述
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56Production

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PSMN1R1-30YLE 数据手册

PSMN1R1-30YLE

N-channel 30 V, 1.3 mOhm, ASFET for hotswap with

enhanced SOA in LFPAK56

10 November 2022

Product data sheet

1. General description

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package

optimized for low R_DSonand strong safe operating area, optimized for hot-swap, inrush and linear-

mode applications.

2. Features and benefits

•

Fully optimized Safe Operating Area (SOA) for superior linear mode operation

Optimized for low R_DSon/ low I²R conduction losses

LFPAK56 package for applications that demand the highest performance and reliability in a

30 mm²footprint

•

Low leakage <1 µA at 25 °C

Copper-clip for low parasitic inductance and resistance

High reliability LFPAK package, qualified to 175 °C

3. Applications

•

Hot swap in 12 V - 20 V applications

e-Fuse

DC switch

Load switch

Battery protection

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

265

192

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

1.01

1.28

1.26

1.8

mΩ

V_GS= 7 V; I_D= 25 A; T_j= 25 °C; Fig. 10

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

I_D= 25 A; V_DS= 15 V; V_GS= 4.5 V;

T_j= 25 °C; Fig. 12; Fig. 13

Q_G(tot)

12 3 4 5 6 7...13

中文翻译

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