Datasheet > PSMN1R0-40YSH

PSMN1R0-40YSH

更新时间： 2024-11-07 11:10:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	295K
描述
N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technologyProduction

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PSMN1R0-40YSH 数据手册

PSMN1R0-40YSH

N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in

LFPAK56E using NextPower-S3 Schottky-Plus technology

25 April 2019

Product data sheet

1. General description

290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance power switching applications.

2. Features and benefits

•

290 A continuous I_D(max)

•

Avalanche rated, 100% tested

NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

Low Q_RR, Q_Gand Q_GDfor high system efficiency and low EMI designs

Schottky-Plus body-diode, gives soft switching without the associated high I_DSSleakage

Strong linear-mode / SOA rating

High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to

175 °C

•

Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints for ultimate reliability

Low parasitic inductance and resistance

3. Applications

•

High-performance synchronous rectification

DC-to-DC converters

High performance and high efficiency server power supply

Brushless DC motor control

Battery protection

Load-switch and eFuse

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

290

333

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

0.85

mΩ

12 3 4 5 6 7...12

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