Datasheet > PSMN1R1-100CSE

PSMN1R1-100CSE

更新时间： 2024-09-17 17:01:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	261K
描述
N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i packageDevelopment

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PSMN1R1-100CSE 数据手册

PSMN1R1-100CSE

N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA

in CCPAK1212i package

7 February 2024

Objective data sheet

1. General description

N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C.

Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The

PSMN1R1-100CSE delivers very low R_DSonand enhanced safe operating area performance in a

high-reliability copper-clip package (CCPAK1212).

PSMN1R1-100CSE complements the latest "hot-swap" controllers - robust enough to withstand

substantial inrush currents during turn-on, low R_DSonto minimize I²R losses and deliver optimum

efficiency when turned fully ON.

2. Features and benefits

•

Fully optimized Safe Opertating Area (SOA) for superior linear mode operation

•

Low R_DSonfor low I²R conduction losses

CCPAK1212i package for applications that demand the highest performance and reliability

Inverted package, suitable for top-side cooling

3. Applications

•

Hot swap

Load switch

Soft start

E-fuse

Telecommunication systems based on a 48 V backplane/supply rail

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

100

400

1.07

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C

I_D

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

0.87

1.09

mΩ

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

T_j= 25 °C; Fig. 2

12 3 4 5 6 7 8

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