Datasheet > PSMN1R1-25YLC,115

PSMN1R1-25YLC,115

更新时间： 2024-09-16 20:58:27

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
15页	369K
描述
PSMN1R1-25YLC - N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology SOIC 4-Pin

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技术参数
数据手册

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PSMN1R1-25YLC,115 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOIC
针数：	4	Reach Compliance Code：	not_compliant
风险等级：	5.76	Base Number Matches：	1

PSMN1R1-25YLC,115 数据手册

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PSMN1R1-25YLC

LFP

N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 1 — 2 May 2011

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

High reliability Power SO8 package,

Ultra low QG, QGD and QOSS for high

system efficiencies at low and high

loads

qualified to 175°C

Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

Ultra low Rdson and low parasitic

inductance

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Power OR-ing

Server power supplies

Sync rectifier

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ

Max Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

[1]

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

100

P_tot

T_j

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

215

175

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A;

T_j= 25 °C;

see Figure 12

1.2

1.5

mΩ

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C;

0.95 1.15 mΩ

see Figure 12

12 3 4 5 6 7...15

中文翻译

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