Datasheet > PSMN1R0-40YLD

PSMN1R0-40YLD

更新时间： 2024-09-17 11:13:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	263K
描述
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technologyProduction

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PSMN1R0-40YLD 数据手册

PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in

LFPAK56 using NextPower-S3 Schottky-Plus technology

30 November 2017

Product data sheet

1. General description

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance power switching applications.

2. Features and benefits

•

280 A capability

•

Avalanche rated, 100% tested at I_AS= 190 A

NextPower-S3 technology delivers 'superfast switching with soft recovery'

Low Q_RR, Q_Gand Q_GDfor high system efficiency and low EMI designs

Schottky-Plus body-diode, gives soft switching without the associated high I_DSSleakage

Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology

High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and

qualified to 150 °C

•

Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

Low parasitic inductance and resistance

3. Applications

•

Synchronous rectification

DC-to-DC converters

High performance & high efficiency server power supply

Motor control

Power ORing

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 150 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

280

198

150

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 10; Fig. 11

1.1

1.4

1.1

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10; Fig. 11

0.93

12 3 4 5 6 7...14

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