Datasheet > PSMN1R0-40ULD

PSMN1R0-40ULD

更新时间： 2024-09-17 11:13:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	264K
描述
N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595Production

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PSMN1R0-40ULD 数据手册

PSMN1R0-40ULD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in

SOT1023A enhanced package for UL2595, using NextPower-

S3 Schottky-Plus technology

23 May 2018

Product data sheet

1. General description

SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic

level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using

advanced TrenchMOS Superjunction technology. This product has been designed and qualified for

high performance power switching applications.

2. Features and benefits

•

Improved creepage and clearance – meets the requirements of UL2595

280 A capability

•

Avalanche rated, 100% tested at I_AS= 190 A

NextPower-S3 technology delivers 'superfast switching with soft recovery'

Low Q_RR, Q_Gand Q_GDfor high system efficiency and low EMI designs

Schottky-Plus body-diode, gives soft switching without the associated high I_DSSleakage

Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology

High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to

150 °C

•

Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

Low parasitic inductance and resistance

3. Applications

•

Brushed and brushless motor control

Battery powered appliances where enhanced creepage and clearance is required to meet

UL2595

•

For non-UL2595 applications please use PSMN1R0-40YLD

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 150 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

280

164

150

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 10; Fig. 11

1.1

1.4

1.1

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10; Fig. 11

0.93

12 3 4 5 6 7...13

中文翻译

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与PSMN1R0-40ULD相关器件

型号	品牌	获取价格	描述	数据表
PSMN1R0-40YLD	NEXPERIA	获取价格	N-channel 40 V, 1.1 mΩ, 280 A logic level MOS
PSMN1R0-40YSH	NEXPERIA	获取价格	N-channel 40 V, 1 mΩ, 290 A standard level MO
PSMN1R1-100CSE	NEXPERIA	获取价格	N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i packageDevelopment
PSMN1R1-25YLC	NXP	获取价格	NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)
PSMN1R1-25YLC	NEXPERIA	获取价格	N-channel 25 V 1.15 mΩ logic level MOSFET in
PSMN1R1-25YLC,115	NXP	获取价格	PSMN1R1-25YLC - N-channel 25 V 1.15 mΩ logic
PSMN1R1-30BL,118	NXP	获取价格	N-channel 30 V 1.1 mGäª logic level MOSFET in D2PAK, SOT404 Package, Sta
PSMN1R1-30EL	NXP	获取价格	120A, 30V, 0.0014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3
PSMN1R1-30EL,127	NXP	获取价格	PSMN1R1-30EL - N-channel 30 V 1.3 mΩ logic le
PSMN1R1-30PL	NEXPERIA	获取价格	N-channel 30 V 1.3 mΩ logic level MOSFET in T

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