Datasheet > PSMN1R0-30YLC_11

PSMN1R0-30YLC_11

更新时间： 2024-09-15 10:00:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	295K
描述
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

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PSMN1R0-30YLC_11 数据手册

PSMN1R0-30YLC

LFP

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 4 — 4 July 2011

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

 Ultra low QG, QGD, and QOSS for

high system efficiencies at low and

high loads

qualified to 175°C

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

 Ultra low Rdson and low parasitic

inductance

1.3 Applications

 DC-to-DC converters

 Lithium-ion battery protection

 Load switching

 Power OR-ing

 Server power supplies

 Sync rectifier

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

V_DS

I_D

drain-source voltage

25 °C ≤ T_j≤ 175 °C

[1]

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

100

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

272

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A;

T_j= 25 °C; see Figure 12

1.1

1.4

mΩ

V_GS= 10 V; I_D= 25 A;

0.85 1.15 mΩ

T_j= 25 °C; see Figure 12

12 3 4 5 6 7...15

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