Datasheet > PSMN038-100HS

PSMN038-100HS

更新时间： 2024-09-09 11:13:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	276K
描述
N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technologyProduction

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PSMN038-100HS 数据手册

PSMN038-100HS

N-channel 100 V, 37.6 mOhm, standard level MOSFET in

LFPAK56D using TrenchMOS technology

26 September 2022

Product data sheet

1. General description

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using

TrenchMOS technology.

2. Features and benefits

•

High peak drain current I_DM

•

Copper clip and flexible Leads

High operating junction temperature T_j= 175 °C

Superior reliability

Low body diode reverse recovery charge Q_r

3. Applications

•

Synchronous rectifier

Forward and flyback converter

Industrial drive

Power management system

Uninterruptible Power Supply (UPS)

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

100

21.4

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

175

°C

Static characteristics FET1 and FET2

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 5 A; T_j= 25 °C; Fig. 11

37.6

104

mΩ

V_GS= 10 V; I_D= 5 A; T_j= 175 °C;

Fig. 11; Fig. 12

Dynamic characteristics FET1 and FET2

Q_GD

gate-drain charge

total gate charge

I_D= 5 A; V_DS= 80 V; V_GS= 10 V;

T_j= 25 °C; Fig. 13; Fig. 14

9.7

Q_G(tot)

25.9

Avalanche Ruggedness FET1 and FET2

E_DS(AL)S

non-repetitive drain-

source avalanche

energy

I_D= 21.4 A; V_sup≤ 100 V; R_GS= 50 Ω; [1] [2]

V_GS= 10 V; T_j(init)= 25 °C; unclamped;

Fig. 4

12 3 4 5 6 7...12

中文翻译

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