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PSMN035-150B,118 PDF预览

PSMN035-150B,118

更新时间: 2024-09-08 21:11:39
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
12页 206K
描述
N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin

PSMN035-150B,118 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:D2PAK包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.15雪崩能效等级(Eas):460 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PSMN035-150B,118 数据手册

 浏览型号PSMN035-150B,118的Datasheet PDF文件第2页浏览型号PSMN035-150B,118的Datasheet PDF文件第3页浏览型号PSMN035-150B,118的Datasheet PDF文件第4页浏览型号PSMN035-150B,118的Datasheet PDF文件第5页浏览型号PSMN035-150B,118的Datasheet PDF文件第6页浏览型号PSMN035-150B,118的Datasheet PDF文件第7页 
PSMN035-150B  
N-channel TrenchMOS SiliconMAX standard level FET  
Rev. 04 — 17 November 2009  
Product data sheet  
1. Product profile  
1.1 General description  
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in  
a plastic package using TrenchMOS technology. This product is designed and qualified for  
use in computing, communications, consumer and industrial applications only.  
1.2 Features and benefits  
„ Low conduction losses due to low  
„ Suitable for high frequency  
applications due to fast switching  
characteristics  
on-state resistance  
1.3 Applications  
„ Switched-mode power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
150  
50  
V
A
drain current  
Tmb = 25 °C; see Figure 1  
and 2  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 3  
-
-
-
250  
45  
W
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 50 A;  
VDS = 120 V; Tj = 25 °C;  
see Figure 13  
33  
nC  
Static characteristics  
RDSon  
drain-source  
on-state resistance  
VGS = 10 V; ID = 25 A;  
Tj = 25 °C; see Figure 11  
and 12  
-
30  
35  
mΩ  
 
 
 
 
 

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