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IXTQ120N20P PDF预览

IXTQ120N20P

更新时间: 2024-11-05 21:18:23
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 232K
描述
Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

IXTQ120N20P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.39其他特性:AVALANCHE RATED
雪崩能效等级(Eas):2000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):120 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):300 A认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTQ120N20P 数据手册

 浏览型号IXTQ120N20P的Datasheet PDF文件第2页浏览型号IXTQ120N20P的Datasheet PDF文件第3页浏览型号IXTQ120N20P的Datasheet PDF文件第4页浏览型号IXTQ120N20P的Datasheet PDF文件第5页浏览型号IXTQ120N20P的Datasheet PDF文件第6页 
PolarHTTM  
Power MOSFET  
IXTK 120N20P  
IXTQ 120N20P  
VDSS = 200 V  
ID25 = 120 A  
RDS(on) 22 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
200  
200  
V
V
G
VGS  
Continuous  
Transient  
20  
30  
V
V
(TAB)  
S
VGSM  
ID25  
TC =25° C  
120  
75  
A
A
A
TO-3P (IXTQ)  
ID(RMS)  
IDM  
External lead current limit  
TC = 25° C, pulse width limited by TJM  
300  
IAR  
TC =25° C  
60  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
60  
mJ  
J
G
D
(TAB)  
2.0  
S
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 175° C, RG = 4 Ω  
,
10  
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25° C  
714  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +175  
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
l
l
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Weight  
TO-3P  
TO-264  
5.5  
10  
g
g
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
Easy to mount  
Space savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
200  
V
V
l
l
2.5  
5.0  
High power density  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
500  
µA  
µA  
TJ = 175° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
22 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99207E(10/05)  
© 2006 IXYS All rights reserved  

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