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IXTQ130N15T PDF预览

IXTQ130N15T

更新时间: 2024-11-05 22:56:43
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6页 189K
描述
MOSFET N-CH 150V 130A TO-3P

IXTQ130N15T 数据手册

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Preliminary Technical Information  
TrenchHVTM  
Power MOSFET  
IXTH130N15T  
IXTQ130N15T  
VDSS = 150  
ID25 = 130  
RDS(on) 12 mΩ  
V
A
N-ChannelEnhancementMode  
AvalancheRated  
TO-247 (IXTH)  
Symbol  
TestConditions  
Maximum Ratings  
G
(TAB)  
D
S
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
150  
150  
V
V
VGSM  
Transient  
± 30  
V
TO-3P(IXTQ)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
130  
75  
330  
A
A
A
IAR  
EAS  
TC = 25°C  
TC = 25°C  
5
1.2  
A
J
G
D
S
(TAB)  
dv/dt  
PD  
IS IDM, di/dt 100 A/ms, VDD VDSS  
TJ 175°C, RG = 2.5 Ω  
3
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
750  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
z Unclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
Weight  
TO-3P  
TO-247  
5.5  
6
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 1 mA  
VGS = ± 20 V, VDS = 0 V  
150  
V
V
2.5  
4.5  
± 200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
250  
μA  
μA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2  
10  
12 mΩ  
DS99796 (02/07)  
© 2007 IXYS CORPORATION, All rights reserved  

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