5秒后页面跳转
IXTQ150N15P PDF预览

IXTQ150N15P

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 319K
描述
Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡的器件解决方案。 这些器件包含了Polar技术平台,以实现低导通电阻(Rdson)。 Polar标准MOS

IXTQ150N15P 数据手册

 浏览型号IXTQ150N15P的Datasheet PDF文件第2页浏览型号IXTQ150N15P的Datasheet PDF文件第3页浏览型号IXTQ150N15P的Datasheet PDF文件第4页浏览型号IXTQ150N15P的Datasheet PDF文件第5页浏览型号IXTQ150N15P的Datasheet PDF文件第6页 
PolarHTTM  
Power MOSFET  
IXTK 150N15P  
IXTQ 150N15P  
VDSS = 150 V  
ID25 = 150 A  
RDS(on) 13 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 175° C  
150  
150  
V
TJ = 25° C to 175° C; RGS = 1 MΩ  
V
G
D (TAB)  
VGS  
Continuous  
Transient  
20  
30  
V
V
D
S
VGSM  
ID25  
TC =25° C  
150  
75  
A
A
A
TO-3P (IXTQ)  
ID(RMS)  
IDM  
External lead current limit  
TC = 25° C, pulse width limited by TJM  
340  
IAR  
TC =25° C  
60  
A
G
EAR  
EAS  
TC =25° C  
TC =25° C  
80  
mJ  
J
(TAB)  
D
S
2.5  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 175° C, RG = 4 Ω  
,
10  
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC =25° C  
714  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +175  
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
l
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
l
Md  
Mounting torque  
TO-3P  
TO-264  
Test Conditions  
1.13/10 Nm/lb.in.  
Weight  
5.5  
10  
g
g
Symbol  
Characteristic Values  
Advantages  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
Easy to mount  
Space savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
150  
V
V
l
l
3.0  
5.0  
High power density  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
500  
µA  
µA  
TJ = 175° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
13 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99299E(03/06)  
© 2006 IXYS All rights reserved  

与IXTQ150N15P相关器件

型号 品牌 获取价格 描述 数据表
IXTQ152N085T IXYS

获取价格

Power Field-Effect Transistor, 152A I(D), 85V, 0.007ohm, 1-Element, N-Channel, Silicon, Me
IXTQ160N075T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低
IXTQ160N10T IXYS

获取价格

Preliminary Technical Information TrenchMVTM Power MOSFET
IXTQ160N10T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXTQ16N50P IXYS

获取价格

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXTQ16N50P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTQ170N10P LITTELFUSE

获取价格

Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, M
IXTQ170N10P IXYS

获取价格

Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, M
IXTQ180N055T IXYS

获取价格

Trench Gate Power MOSFET
IXTQ180N085T IXYS

获取价格

Power Field-Effect Transistor, 180A I(D), 85V, 0.0055ohm, 1-Element, N-Channel, Silicon, M