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IXFN150N15 PDF预览

IXFN150N15

更新时间: 2024-11-17 22:11:55
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描述
HiPerFET Power MOSFET

IXFN150N15 数据手册

 浏览型号IXFN150N15的Datasheet PDF文件第2页 
HiPerFETTM  
Power MOSFET  
IXFN 150N15  
VDSS = 150 V  
ID25 = 150 A  
RDS(on) = 12.5 mW  
Single MOSFET Die  
Preliminary data sheet  
Symbol Test Conditions  
trr £ 250 ns  
miniBLOC, SOT-227 B (IXFN)  
E153432  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MW  
150  
150  
V
V
S
G
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IL(RMS)  
IDM  
TC = 25°C  
150  
100  
600  
150  
A
A
A
A
S
Terminal(currentlimit)  
TC = 25°C; Note 1  
TC = 25°C  
D
IAR  
G = Gate  
S = Source  
D = Drain  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
Features  
PD  
TC = 25°C  
600  
W
· Internationalstandardpackage  
· Encapsulating epoxy meets  
UL94V-0,flammabilityclassification  
· miniBLOC withAluminiumnitride  
isolation  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
°C  
· Low RDS (on) HDMOSTM process  
· Rugged polysilicon gate cell structure  
· Unclamped Inductive Switching (UIS)  
rated  
· Low package inductance  
· Fast intrinsic Rectifier  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Md  
Mountingtorque  
Terminalconnectiontorque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
30  
g
Applications  
· DC-DC converters  
· Synchronousrectification  
· Battery chargers  
· Switched-modeandresonant-mode  
powersupplies  
· DC choppers  
· Temperatureandlightingcontrols  
· Low voltage relays  
Symbol  
TestConditions  
CharacteristicValues  
Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
Min.  
150  
2
VDSS  
VGS(th)  
IGSS  
VGS= 0 V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS= ±20V, VGS = 0V  
V
4
V
±100  
nA  
IDSS  
VDS= VDSS  
VGS= 0 V  
TJ = 25°C  
TJ = 125°C  
100  
2
mA  
mA  
Advantages  
· Easy to mount  
· Space savings  
· High power density  
RDS(on) VGS= 10V, ID = 0.5 • ID25  
12.5  
mW  
Note 2  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98653(9/99)  
1 - 2  

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