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IRHNA7160PBF

更新时间： 2024-11-20 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	110K
描述
Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN

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IRHNA7160PBF 数据手册

PD - 91396C

IRHNA7160

100V, N-CHANNEL

REF: MIL-PRF-19500/664

RAD-Hard^™HEXFET^®

MOSFETTECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNA7160 100K Rads (Si)

IRHNA3160 300K Rads (Si)

IRHNA4160 600K Rads (Si)

0.04Ω

51A JANSR2N7432U

51A JANSF2N7432U

51A JANSG2N7432U

51A JANSH2N7432U

IRHNA8160 1000K Rads (Si) 0.04Ω

SMD - 2

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

32.5

204

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

300

W/°C

Linear Derating Factor

2.4

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

7.3

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 ( for 5s)

3.3 (Typical)

For footnotes refer to the last page

www.irf.com

5/4/2000

12 3 4 5 6 7 8

中文翻译

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与IRHNA7160PBF相关器件

型号	品牌	获取价格	描述	数据表
IRHNA7260	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA7260SCS	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRHNA7260SESCSPBF	INFINEON	获取价格	暂无描述
IRHNA7260SESCV	INFINEON	获取价格	Rad hard, 200V, 27A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA7264SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A)
IRHNA7264SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me
IRHNA7360SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)
IRHNA7360SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7360SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7360SESCSA	INFINEON	获取价格	Rad hard, 400V, 15A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)

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