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IRHNA9064 PDF预览

IRHNA9064

更新时间： 2024-02-29 20:21:18
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
4页 100K
描述
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.055ohm, Id=-48A)

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IRHNA9064 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：CHIP CARRIER, R-CBCC-N3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.68
Is Samacsys：N其他特性：HIGH RELIABILITY, AVALANCHE RATED
雪崩能效等级（Eas）：500 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：48 A最大漏源导通电阻：0.048 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：192 A
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHNA9064 数据手册

 浏览型号IRHNA9064的Datasheet PDF文件第2页浏览型号IRHNA9064的Datasheet PDF文件第3页浏览型号IRHNA9064的Datasheet PDF文件第4页 
Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1447  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHNA9064  
P-CHANNEL  
RADHARD  
-60Volt, 0.055Ω, RAD HARD HEXFET  
Product Summary  
International Rectifier’s P-Channel RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage stability  
and breakdown voltage stability at total radiation doses as  
high as 105 Rads (Si). Under identical pre- and post-radia-  
tion test conditions, International Rectifier’s P-Channel RAD  
HARD HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in gate drive  
circuitry is required. These devices are also capable of sur-  
viving transient ionization pulses as high as 1 x 1012 Rads  
(Si)/Sec, and return to normal operation within a few micro-  
seconds. Single Event Effect (SEE) testing of International  
Rectifier P-Channel RAD HARD HEXFETs has demon-  
strated virtual immunity to SEE failure. Since the P-Chan-  
nel RAD HARD process utilizes International Rectifier’s  
patented HEXFET technology, the user can expect the high-  
est quality and reliability in the industry.  
Part Number  
BVDSS  
RDS(on)  
ID  
IRHNA9064  
-60V  
0.055Ω  
-48A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
IdenticalPre-andPost-ElectricalTestConditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
SimpleDriveRequirements  
Ease of Paralleling  
HermeticallySealed  
Surface Mount  
P-Channel RAD HARD HEXFET transistors also feature  
all of the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paralleling  
and temperature stability of the electrical parameters.They  
are well-suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio amplifi-  
ers and high-energy pulse circuits in space and weapons  
environments.  
Light-Weight  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
= -12V, T = 25°C Continuous Drain Current  
IRHNA9064  
-48  
Units  
I
@ V  
D
GS  
GS  
C
I
D
@ V  
= -12V, T = 100°C Continuous Drain Current  
-30  
A
C
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-192  
300  
DM  
@ T = 25°C  
P
W
W/K ꢀ  
V
D
C
2.4  
V
± 20  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current   
500  
mJ  
AS  
I
-48  
A
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
30  
mJ  
AR  
dv/dt  
-5.5  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
STG  
oC  
g
300 (For 5 sec)  
3.3 (typical)  
Package Mounting Surface Temperature  
Weight  
To Order  
 
 
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