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IRHNB7460SE

更新时间： 2024-11-24 03:42:23
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英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 243K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)

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IRHNB7460SE 数据手册

 浏览型号IRHNB7460SE的Datasheet PDF文件第2页浏览型号IRHNB7460SE的Datasheet PDF文件第3页浏览型号IRHNB7460SE的Datasheet PDF文件第4页浏览型号IRHNB7460SE的Datasheet PDF文件第5页浏览型号IRHNB7460SE的Datasheet PDF文件第6页浏览型号IRHNB7460SE的Datasheet 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PD-91741A  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-3)  
                                                                 
I
                                                                 
                                                                  
R
                                                                   
                                                                     
H
                                                                     
                                                                        
N
                                                                        
                                                                           
B
                                                                           
                                                                              
7
                                                                              
                                                                                
4
500V, N-CHANNEL  
                                                                                
                                                                                  
6
                                                                                  
                                                                                     
0
                                                                                     
                                                                                       
S
                                                                                       
                                                                                          
E
                                                                                          
T®  
T
E
C
H
N
O
L
O
G
Y
™
R
A
D
H
a
r
d
H
E
X
F
E
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHNB7460SE  
100K Rads (Si)  
0.32Ω  
20A  
SMD-3  
International Rectifier’s RADHard HEXFET® MOSFET  
technology provides high performance power MOSFETs  
for space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been characterized  
for both Total Dose and Single Event Effects (SEE). The  
combination of low RDS(on) and low gate charge reduces  
the power losses in switching applications such as DC to  
DC converters and motor control. These devices retain  
all of the well established advantages of MOSFETs such  
as voltage control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
TM  
Features:  
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Light Weight  
Absolute Maximum Ratings  
Parameter  
Pre-Irradiation  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
C
20  
D
GS  
A
I
= 12V, T = 100°C Continuous Drain Current  
C
12  
80  
D
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
P
@ T = 25°C  
C
300  
W
W/°C  
V
D
2.4  
V
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
20  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
30  
mJ  
V/ns  
AR  
dv/dt  
3.8  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
STG  
Package Mounting Surface Temperature  
Weight  
300 (for 5 sec.)  
3.5(Typical)  
g
For footnotes refer to the last page  
www.irf.com  
1
6/4/01  
12345678

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