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IRHNB8Z60 PDF预览

IRHNB8Z60

更新时间: 2024-11-05 03:12:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 119K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)

IRHNB8Z60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:HERMETIC SEALED, SMD-3, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.39
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHNB8Z60 数据手册

 浏览型号IRHNB8Z60的Datasheet PDF文件第2页浏览型号IRHNB8Z60的Datasheet PDF文件第3页浏览型号IRHNB8Z60的Datasheet PDF文件第4页浏览型号IRHNB8Z60的Datasheet PDF文件第5页浏览型号IRHNB8Z60的Datasheet PDF文件第6页浏览型号IRHNB8Z60的Datasheet PDF文件第7页 
PD - 91754A  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT(SMD-3)  
IRHNB7Z60  
30V, N-CHANNEL  
RAD-HardHEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level  
RDS(on)  
ID  
IRHNB7Z60  
IRHNB3Z60  
IRHNB4Z60  
100K Rads (Si) 0.00975*A  
300K Rads (Si) 0.00975*A  
600K Rads (Si) 0.00975*A  
IRHNB8Z60 1000K Rads (Si) 0.00975*A  
SMD-3  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rds(on) and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
75*  
GS  
C
A
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
75*  
300  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
300  
W
W/°C  
V
D
C
Linear Derating Factor  
2.4  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
75  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
30  
mJ  
V/ns  
AR  
dv/dt  
0.35  
-55 to 150  
T
J
T
Storage Temperature Range  
oC  
g
STG  
300 ( for 5 sec.)  
3.3 (Typical )  
Package Mounting Surface Temperature  
Weight  
For footnotes refer to the last page  
*Current is limited by internal wire diameter  
www.irf.com  
1
12/18/01  

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