是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | HERMETIC SEALED, SMD-3, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.39 |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 75 A |
最大漏源导通电阻: | 0.009 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 300 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNJ3130 | INFINEON |
获取价格 |
100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY | |
IRHNJ3130PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNJ3130SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IRHNJ3230 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ4130 | INFINEON |
获取价格 |
100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY | |
IRHNJ4130PBF | INFINEON |
获取价格 |
暂无描述 | |
IRHNJ4130SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IRHNJ4230 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ53034 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ53034PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta |