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IRHNJ53130 PDF预览

IRHNJ53130

更新时间： 2024-11-04 22:28:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 130K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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IRHNJ53130 数据手册

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PD - 93754E  
IRHNJ57130  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-0.5)  
JANSR2N7481U3  
100V, N-CHANNEL  
REF: MIL-PRF-19500/703  
TECHNOLOGY  
™
R
5
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHNJ57130  
IRHNJ53130  
IRHNJ54130  
100K Rads (Si) 0.06Ω  
300K Rads (Si) 0.06Ω  
600K Rads (Si) 0.06Ω  
22A* JANSR2N7481U3  
22A* JANSF2N7481U3  
22A* JANSG2N7481U3  
22A* JANSH2N7481U3  
IRHNJ58130 1000K Rads (Si) 0.075Ω  
SMD-0.5  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
22*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
16  
88  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
70  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
mJ  
A
AS  
I
22  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
1.4  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 ( for 5s )  
1.0 ( Typical )  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
10/24/03  
12345678

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