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IRHNJ53034

更新时间： 2024-11-04 22:05:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 190K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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中文翻译

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IRHNJ53034 数据手册

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PD-93752C  
IRHNJ57034  
RADIATION HARDENED  
POWER MOSFET  
JANSR2N7480U3  
60V, N-CHANNEL  
SURFACE MOUNT (SMD-0.5)  
REF: MIL-PRF-19500/703  
TECHNOLOGY  
5
ꢀꢁ  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHNJ57034 100K Rads (Si)  
IRHNJ53034 300K Rads (Si)  
IRHNJ54034 600K Rads (Si)  
0.030Ω 22A* JANSR2N7480U3  
0.030Ω 22A* JANSF2N7480U3  
0.030Ω 22A* JANSG2N7480U3  
IRHNJ58034 1000K Rads (Si) 0.038Ω  
22A* JANSH2N7480U3  
SMD-0.5  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low Rdson and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
22*  
D
GS  
GS  
C
A
I
D
= 12V, T = 100°C Continuous Drain Current  
21  
88  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
100  
22  
GS  
E
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
10  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
1.0 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
06/16/04  
12345678

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