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IRHNJ57130SCSPBF

更新时间： 2024-09-16 13:02:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
8页	130K
描述
Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

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IRHNJ57130SCSPBF 数据手册

PD - 93754E

IRHNJ57130

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

JANSR2N7481U3

100V, N-CHANNEL

REF: MIL-PRF-19500/703

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNJ57130

IRHNJ53130

IRHNJ54130

100K Rads (Si) 0.06Ω

300K Rads (Si) 0.06Ω

600K Rads (Si) 0.06Ω

22A* JANSR2N7481U3

22A* JANSF2N7481U3

22A* JANSG2N7481U3

22A* JANSH2N7481U3

IRHNJ58130 1000K Rads (Si) 0.075Ω

SMD-0.5

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

22*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

1.4

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 ( for 5s )

1.0 ( Typical )

* Current is limited by package

For footnotes refer to the last page

www.irf.com

10/24/03

12 3 4 5 6 7 8

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与IRHNJ57130SCSPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ57133SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ57230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ57230SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ57230SEA	INFINEON	获取价格	Rad hard, 200V, 12A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ57230SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRHNJ57230SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met
IRHNJ57234SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ57234SEPBF	INFINEON	获取价格	暂无描述
IRHNJ57234SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Meta
IRHNJ57Z30	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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