型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNJ57Z30B | INFINEON |
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Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad( | |
IRHNJ57Z30PBF | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHNJ57Z30SCSPBF | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHNJ58034 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ58034PBF | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHNJ58130 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ58230 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ58Z30 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ58Z30PBF | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHNJ593034 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT |