Datasheet > IRHNJ593230PBF

IRHNJ593230PBF

更新时间： 2024-11-09 19:47:51

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
8页	119K
描述
Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

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IRHNJ593230PBF 数据手册

PD - 94046C

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

IRHNJ597230

200V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNJ597230 100K Rads (Si) 0.505Ω -8.0A

IRHNJ593230 300K Rads (Si) 0.505Ω -8.0A

SMD-0.5

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-8.0

= -12V, T = 100°C Continuous Drain Current

-5.0

-32

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

-8.0

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

-13.7

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 ( for 5s )

1.0 ( Typical )

For footnotes refer to the last page

www.irf.com

11/28/01

12 3 4 5 6 7 8

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与IRHNJ593230PBF相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ593Z30	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ594130	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 12.5A I(D) \| SMT
IRHNJ594230	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| SMT
IRHNJ597034	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHNJ597034A	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ597034B	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ597034SCS	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ597034SCSA	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ597034SCSB	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ597034SCV	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra

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