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IRHNJ5S97230SCS PDF预览

IRHNJ5S97230SCS

更新时间: 2024-11-06 14:56:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 1443K
描述
-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level S

IRHNJ5S97230SCS 数据手册

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PD-97953A  
IRHNJ5S97230  
200V, P-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-0.5)  
TECHNOLOGY  
R
5
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHNJ5S97230  
IRHNJ5S93230  
100 kRads (Si)  
300 kRads (Si)  
-8.0A  
-8.0A  
0.505  
0.505  
Description  
Features  
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Electrically Isolated  
Ceramic package  
Light Weight  
Surface Mount  
IR HiRel R5 S-line technology provides superior power  
MOSFETs for space applications. These devices have  
improved immunity to Single Event Effect (SEE) and have  
been characterized for useful performance with Linear  
Energy Transfer (LET) up to 60MeV/(mg/cm2). Their  
combination of low RDS(on) and faster switching times  
reduces the power losses and increases power density in  
today’s high speed switching applications such as DC-DC  
converters and motor controllers. These devices retain  
all of the well established advantages of MOSFETs such  
as voltage control, fast switching and temperature  
stability of electrical parameters.  
ESD Rating: Class 1C per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = -12V, TC = 25°C  
Continuous Drain Current  
-8.0  
A
ID2 @ VGS = -12V, TC = 100°C  
IDM @TC = 25°C  
Continuous Drain Current  
Pulsed Drain Current  
Maximum Power Dissipation  
-5.0  
-32  
W
W/°C  
V
PD @TC = 25°C  
75  
Linear Derating Factor  
0.6  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
Single Pulse Avalanche Energy   
Avalanche Current   
75  
mJ  
A
-8.0  
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
7.5  
-13.7  
-55 to + 150  
TSTG  
Storage Temperature Range  
Package Mounting Surface Temperature  
Weight  
°C  
g
300 (for 5s)  
1.0 (Typical)  
For Footnotes, refer to the page 2.  
1
2020-02-14  
International Rectifier HiRel Products, Inc.  

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