Datasheet > IRHNJ597130B

IRHNJ597130B

更新时间： 2024-11-25 14:56:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	2184K
描述
Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHNJ597130B 数据手册

PD-94047D

IRHNJ597130

JANSR2N7545U3

100V, P-CHANNEL

REF: MIL-PRF-19500/712

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number

IRHNJ597130

IRHNJ593130

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7545U3

JANSF2N7545U3

100 kRads(Si)

300 kRads(Si)

-12.5A

0.205

SMD-0.5

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 80

(MeV/(mg/cm²). The combination of low RDS(on) and low

gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

I_D1@ V_GS= -12V, T_C= 25°C

I_D2@ V_GS= -12V, T_C= 100°C

I_DM@ T_C= 25°C

Value

Parameter

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

Units

-12.5

-8.0

-50

P_D@ T_C= 25°C

W/°C

Linear Derating Factor

0.6

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy 

Avalanche Current 

-12.5

7.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

V/ns

-6.2

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

1.0 (Typical)

For Footnotes, refer to the page 2.

2019-02-25

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHNJ597130B相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ597130SCS	INFINEON	获取价格	暂无描述
IRHNJ597130SCSA	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
IRHNJ597130SCSB	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
IRHNJ597130SCSPBF	INFINEON	获取价格	暂无描述
IRHNJ597130SCVA	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
IRHNJ597130SCVB	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
IRHNJ597230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ597230A	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNJ597Z30	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ597Z30SCS	INFINEON	获取价格	Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra

与IRHNJ597130B相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNJ597130B

IRHNJ597130B 数据手册

与IRHNJ597130B相关器件

与IRHNJ597130B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNJ597130B

IRHNJ597130B 数据手册

与IRHNJ597130B相关器件

与IRHNJ597130B相关文章

您还可以找

您在本页遇到什么问题？