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IRHNJ598130 PDF预览

IRHNJ598130

更新时间: 2024-11-23 23:58:55
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其他 - ETC /
页数 文件大小 规格书
8页 122K
描述
-100V 1000kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package

IRHNJ598130 数据手册

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PD - 94047A  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-0.5)  
IRHNJ597130  
100V, P-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHNJ597130 100K Rads (Si) 0.205-12.5A  
IRHNJ593130 300K Rads (Si) 0.205-12.5A  
SMD-0.5  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-12.5  
D
GS  
C
A
I
D
= -12V, T = 100°C Continuous Drain Current  
-8.0  
-50  
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
96  
mJ  
A
AS  
I
-12.5  
7.5  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
mJ  
V/ns  
-6.2  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 ( for 5s )  
1.0 ( Typical )  
For footnotes refer to the last page  
www.irf.com  
1
10/01/01  

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