5秒后页面跳转
IRHNJ598130 PDF预览

IRHNJ598130

更新时间: 2024-11-04 23:58:55
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
8页 122K
描述
-100V 1000kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package

IRHNJ598130 数据手册

 浏览型号IRHNJ598130的Datasheet PDF文件第2页浏览型号IRHNJ598130的Datasheet PDF文件第3页浏览型号IRHNJ598130的Datasheet PDF文件第4页浏览型号IRHNJ598130的Datasheet PDF文件第5页浏览型号IRHNJ598130的Datasheet PDF文件第6页浏览型号IRHNJ598130的Datasheet PDF文件第7页 
PD - 94047A  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-0.5)  
IRHNJ597130  
100V, P-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHNJ597130 100K Rads (Si) 0.205-12.5A  
IRHNJ593130 300K Rads (Si) 0.205-12.5A  
SMD-0.5  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-12.5  
D
GS  
C
A
I
D
= -12V, T = 100°C Continuous Drain Current  
-8.0  
-50  
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
96  
mJ  
A
AS  
I
-12.5  
7.5  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
mJ  
V/ns  
-6.2  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 ( for 5s )  
1.0 ( Typical )  
For footnotes refer to the last page  
www.irf.com  
1
10/01/01  

与IRHNJ598130相关器件

型号 品牌 获取价格 描述 数据表
IRHNJ598230 INFINEON

获取价格

Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Met
IRHNJ5S97130 INFINEON

获取价格

-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package?
IRHNJ5S97130SCS INFINEON

获取价格

-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level
IRHNJ5S97230 INFINEON

获取价格

-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package?
IRHNJ5S97230SCS INFINEON

获取价格

-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level
IRHNJ63130 INFINEON

获取价格

100V, N-CHANNEL
IRHNJ63130PBF INFINEON

获取价格

Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRHNJ63134 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ63134PBF INFINEON

获取价格

暂无描述
IRHNJ63230 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)