型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNJ598230 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Met | |
IRHNJ5S97130 | INFINEON |
获取价格 |
-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package? | |
IRHNJ5S97130SCS | INFINEON |
获取价格 |
-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level | |
IRHNJ5S97230 | INFINEON |
获取价格 |
-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package? | |
IRHNJ5S97230SCS | INFINEON |
获取价格 |
-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level | |
IRHNJ63130 | INFINEON |
获取价格 |
100V, N-CHANNEL | |
IRHNJ63130PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNJ63134 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) | |
IRHNJ63134PBF | INFINEON |
获取价格 |
暂无描述 | |
IRHNJ63230 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) |