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IRHNJ63130PBF PDF预览

IRHNJ63130PBF

更新时间： 2024-11-05 19:31:51
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 187K
描述
Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

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IRHNJ63130PBF 数据手册

 浏览型号IRHNJ63130PBF的Datasheet PDF文件第2页浏览型号IRHNJ63130PBF的Datasheet PDF文件第3页浏览型号IRHNJ63130PBF的Datasheet PDF文件第4页浏览型号IRHNJ63130PBF的Datasheet PDF文件第5页浏览型号IRHNJ63130PBF的Datasheet PDF文件第6页浏览型号IRHNJ63130PBF的Datasheet PDF文件第7页 
PD-95816D  
IRHNJ67130  
RADIATION HARDENED  
POWER MOSFET  
JANSR2N7587U3  
100V, N-CHANNEL  
SURFACE MOUNT (SMD-0.5)  
REF: MIL-PRF-19500/746  
TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on) ID  
QPL Part Number  
IRHNJ67130 100K Rads (Si)  
IRHNJ63130 300K Rads (Si)  
0.042Ω 22A* JANSR2N7587U3  
0.042Ω 22A* JANSF2N7587U3  
SMD-0.5  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer  
(LET) up to 90MeV/(mg/cm2). Their combination of  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
very low R  
and faster switching times reduces  
DS(on)  
power loss and increases power density in today’s  
high speed switching applications such as DC-DC  
converters and motor controllers. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, ease of paralleling  
and temperature stability of electrical parameters.  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
22*  
19  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
88  
DM  
@ T = 25°C  
P
D
75  
W
W/°C  
V
C
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
73  
GS  
E
mJ  
A
AS  
I
22  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
3.8  
T
-55 to 150  
J
°C  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
1.0 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
07/25/12  
1234567...9

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