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IRHNJ67130SCSB PDF预览

IRHNJ67130SCSB

更新时间: 2024-11-25 14:50:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 1067K
描述
Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL, Lead Attached and Formed

IRHNJ67130SCSB 数据手册

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PD-95816E  
IRHNJ67130  
JANSR2N7587U3  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-0.5)  
REF: MIL-PRF-19500/746  
TECHNOLOGY  
R
6
Product Summary  
Part Number  
IRHNJ67130  
IRHNJ63130  
Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7587U3  
JANSF2N7587U3  
100 kRads(Si)  
300 kRads(Si)  
22A*  
22A*  
0.042  
0.042  
SMD-0.5  
Description  
Features  
Low RDS(on)  
IR HiRel R6 technology provides high performance power  
MOSFETs for space applications. These devices have  
improved immunity to Single Event Effect (SEE) and have  
been characterized for useful performance with Linear Energy  
Transfer (LET) up to 90MeV/(mg/cm2). Their combination of  
very low RDS(on) and faster switching times reduces power  
loss and increases power density in todays high speed  
switching applications such as DC-DC converters and motor  
controllers. These devices retain all of the well established  
advantages of MOSFETs such as voltage control, ease of  
paralleling and temperature stability of electrical parameters.  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
ESD Rating: Class 1C per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current  
22*  
A
19  
88  
IDM @ TC = 25°C  
PD @TC = 25°C  
Pulsed Drain Current   
W
W/°C  
V
Maximum Power Dissipation  
75  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
0.6  
±20  
73  
VGS  
EAS  
IAR  
mJ  
A
22  
mJ  
EAR  
dv/dt  
TJ  
7.5  
3.8  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
V/ns  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
1.0 (Typical)  
Weight  
* Current is limited by package  
For Footnotes, refer to the page 2.  
1
2019-12-10  
International Rectifier HiRel Products, Inc.  

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