型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNJ67130PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNJ67130SCS | INFINEON |
获取价格 |
Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67130SCSB | INFINEON |
获取价格 |
Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67134 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) | |
IRHNJ67134B | INFINEON |
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Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67134PBF | INFINEON |
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暂无描述 | |
IRHNJ67134SCS | INFINEON |
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Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67230 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) | |
IRHNJ67230A | INFINEON |
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Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67230B | INFINEON |
获取价格 |
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad |