Datasheet > IRHNJ67130B

IRHNJ67130B

更新时间： 2024-11-25 14:50:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1067K
描述
Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed

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IRHNJ67130B 数据手册

PD-95816E

IRHNJ67130

JANSR2N7587U3

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

REF: MIL-PRF-19500/746

TECHNOLOGY

Product Summary

Part Number

IRHNJ67130

IRHNJ63130

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7587U3

JANSF2N7587U3

100 kRads(Si)

300 kRads(Si)

22A*

0.042

SMD-0.5

Description

Features



Low R_DS(on)

IR HiRel R6 technology provides high performance power

MOSFETs for space applications. These devices have

improved immunity to Single Event Effect (SEE) and have

been characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

very low RDS(on) and faster switching times reduces power

loss and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, ease of

paralleling and temperature stability of electrical parameters.

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Ceramic Package

Surface Mount

ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

22*

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.6

±20

V_GS

E_AS

I_AR

E_AR

dv/dt

T_J

7.5

3.8

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

-55 to + 150

T_STG

°C

300 (for 5s)

1.0 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2019-12-10

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHNJ67130B相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ67130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRHNJ67130SCS	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67130SCSB	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67134	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ67134B	INFINEON	获取价格	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67134PBF	INFINEON	获取价格	暂无描述
IRHNJ67134SCS	INFINEON	获取价格	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ67230A	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67230B	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad

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