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IRHNJ67130

更新时间: 2024-11-23 21:53:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 180K
描述
100V, N-CHANNEL

IRHNJ67130 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
Is Samacsys:N雪崩能效等级(Eas):73 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):22 A
最大漏极电流 (ID):22 A最大漏源导通电阻:0.042 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):75 W最大脉冲漏极电流 (IDM):88 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHNJ67130 数据手册

 浏览型号IRHNJ67130的Datasheet PDF文件第2页浏览型号IRHNJ67130的Datasheet PDF文件第3页浏览型号IRHNJ67130的Datasheet PDF文件第4页浏览型号IRHNJ67130的Datasheet PDF文件第5页浏览型号IRHNJ67130的Datasheet PDF文件第6页浏览型号IRHNJ67130的Datasheet PDF文件第7页 
PD-95816A  
RADIATION HARDENED  
POWER MOSFET  
SURFACE-MOUNT (SMD-0.5)  
IRHNJ67130  
100V, N-CHANNEL  
TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHNJ67130 100K Rads (Si)  
IRHNJ63130 300K Rads (Si)  
0.04222A*  
0.04222A*  
SMD-0.5  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer (LET)  
up to 90MeV/(mg/cm2).  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Their combination of very low R  
DS(on)  
and faster  
switching times reduces power loss and increases  
power density in today’s high speed switching  
applications such as DC-DC converters and motor  
controllers. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, ease of paralleling and temperature stability  
of electrical parameters.  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
22*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
19  
88  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
73  
GS  
E
mJ  
A
AS  
I
22  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
3.8  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
1.0 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
02/18/05  

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