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IRHNJ67434_15

更新时间： 2024-11-28 01:07:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 193K
描述
Simple Drive Requirements

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中文翻译

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IRHNJ67434_15 数据手册

 浏览型号IRHNJ67434_15的Datasheet PDF文件第2页浏览型号IRHNJ67434_15的Datasheet PDF文件第3页浏览型号IRHNJ67434_15的Datasheet PDF文件第4页浏览型号IRHNJ67434_15的Datasheet PDF文件第5页浏览型号IRHNJ67434_15的Datasheet PDF文件第6页浏览型号IRHNJ67434_15的Datasheet PDF文件第7页 
PD-97804  
RADIATION HARDENED  
POWER MOSFET  
SURFACE-MOUNT (SMD-0.5)  
IRHNJ67434  
550V, N-CHANNEL  
TECHNOLOGY  
Product Summary  
Part Number  
IRHNJ67434  
IRHNJ63434  
Radiation Level RDS(on)  
ID  
3.4A  
3.4A  
100K Rads (Si)  
300K Rads (Si)  
2.9Ω  
2.9Ω  
SMD-0.5  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer (LET)  
up to 90MeV/(mg/cm2).  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Their combination of very low R  
and faster  
DS(on)  
switching times reduces power loss and increases  
power density in today’s high speed switching  
applications such as DC-DC converters and motor  
controllers. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, ease of paralleling and temperature stability  
of electrical parameters.  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
3.4  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
2.2  
13.6  
75  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
76  
mJ  
A
AS  
I
3.4  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
9.2  
T
-55 to 150  
J
°C  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
1.0 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
01/11/13  
12345678

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