Datasheet > IRHNJ7430SESCSPBF

IRHNJ7430SESCSPBF

更新时间： 2024-11-24 20:43:11

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
8页	125K
描述
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

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PD - 93830A

IRHNJ7430SE

JANSR2N7466U3

500V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

REF: MIL-PRF-19500/676

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNJ7430SE 100K Rads (Si) 1.65Ω 4.5A JANSR2N7466U3

SMD-0.5

International Rectifier’s RADHard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

4.5

2.8

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

±20

150

4.5

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

2.5

-55 to 150

STG

StorageTemperature Range

^oC

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0(Typical)

For footnotes refer to the last page

www.irf.com

4/18/01

12 3 4 5 6 7 8

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与IRHNJ7430SESCSPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ8130	INFINEON	获取价格	100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
IRHNJ8130SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNJ8230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ9130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ9130A	INFINEON	获取价格	Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 kr
IRHNJ9130B	INFINEON	获取价格	Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 kr
IRHNJ9130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Met
IRHNJ9130SCSA	INFINEON	获取价格	Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 kr
IRHNJ9230	INFINEON	获取价格	Power Field-Effect Transistor
IRHNJ9230SCS	INFINEON	获取价格	Rad hard, -200V, -6.5A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 k

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