Datasheet > IRHNJ9A7234SCS

IRHNJ9A7234SCS

更新时间： 2024-11-24 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	739K
描述
Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad TID, QIRL

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IRHNJ9A7234SCS 数据手册

IRHNJ9A7234, IRHNJC9A7234

Radiation Hardened Power MOSFET

PD-97885B

250V, 17A, N-channel, R9 Superjunction Technology

Product Summary

Features

•

BV_DSS: 250V

I_D: 17A

R_{DS(on), max}: 110m

Q_{G, max}: 34nC

REF: MIL-PRF-19500/775

•

Low R_DS(on)

Fast switching

Single event effect (SEE) hardened

Low total gate charge

Simple drive requirements

Hermetically sealed

Ceramic package

Light weight

Surface mount

ESD rating: class 2 per MIL-STD-750, Method 1020

Potential Applications

SMD – 0.5

•

DC-DC converter

Motor drives

Electric propulsion

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 88.6 MeV·cm²/mg. Their combination of low R_DS(on)and faster switching times reduces the

power losses and increases power density in today’s high speed switching applications such as DC-DC

converters and motor controllers. These devices retain all of the well-established advantages of MOSFETs such

as voltage control, fast switching and temperature stability of electrical parameters.

Ordering Information

Table 1

Ordering options

Part number

IRHNJ9A7234

Package

Screening Level

COTS

TID Level

SMD-0.5

100 krad(Si)

300 krad(Si)

100 krad(Si)

300 krad(Si)

JANSR2N7649U3

IRHNJ9A3234

SMD-0.5

JANS

SMD-0.5

COTS

JANSF2N7649U3

IRHNJC9A7234

JANSR2N7649U3C

IRHNJC9A3234

JANSF2N7649U3C

SMD-0.5

JANS

SMD-0.5 (Ceramic Lid)

COTS

JANS

COTS

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 15

www.infineon.com/irhirel

2022-05-09

12 3 4 5 6 7...15

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与IRHNJ9A7234SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHNJC9A3034	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-
IRHNJC9A3130	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD
IRHNJC9A7034	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-
IRHNJC9A7130	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD
IRHNKC9A93034	INFINEON	获取价格	Rad hard, -60V, -32A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SMD
IRHNKC9A93130	INFINEON	获取价格	Rad hard, -100V, -24A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SM
IRHNKC9A97034	INFINEON	获取价格	Rad hard, -60V, -32A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SMD
IRHNKC9A97130	INFINEON	获取价格	Rad hard, -100V, -24A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SM
IRHNM53110	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRHNM54110	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me

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