Datasheet > IRHNJ9230

IRHNJ9230

更新时间： 2024-11-19 21:17:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	181K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
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IRHNJ9230 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.39	Base Number Matches：	1

IRHNJ9230 数据手册

PD-97821

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

IRHNJ9230

200V, P-CHANNEL

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNJ9230

100K Rads (Si)

300K Rads (Si)

0.8Ω

-6.5A

IRHNJ93230

SMD-0.5

International Rectifier’s RADHard HEXFET^®technology

provides high performance power MOSFETs for space

applications. This technology has over a decade of proven

performance and reliability in satellite applications. These

devices have been characterized for both Total Dose and

Single Event Effects (SEE). The combination of low Rdson

and low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor

control. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

n ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-6.5

= -12V, T = 100°C Continuous Drain Current

-4.1

-26

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

± 20

165

-6.5

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

-27

-55 to 150

Storage Temperature Range

°C

STG

(for 5s)

Package Mounting Surface Temp.

Weight

300

1.0 (Typical)

For footnotes, refer to the last page

www.irf.com

08/01/14

12 3 4 5 6 7 8

中文翻译

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与IRHNJ9230相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ9230SCS	INFINEON	获取价格	Rad hard, -200V, -6.5A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 k
IRHNJ93130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ93130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Met
IRHNJ93230	INFINEON	获取价格	Power Field-Effect Transistor
IRHNJ9A3034	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
IRHNJ9A3034SCS	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
IRHNJ9A3130	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
IRHNJ9A3130SCS	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
IRHNJ9A3234	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
IRHNJ9A3234SCS	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad

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