Datasheet > IRHNJ9A3234

IRHNJ9A3234

更新时间： 2024-11-24 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	739K
描述
Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad TID, COTS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHNJ9A3234 数据手册

IRHNJ9A7234, IRHNJC9A7234

Radiation Hardened Power MOSFET

PD-97885B

250V, 17A, N-channel, R9 Superjunction Technology

Product Summary

Features

•

BV_DSS: 250V

I_D: 17A

R_{DS(on), max}: 110m

Q_{G, max}: 34nC

REF: MIL-PRF-19500/775

•

Low R_DS(on)

Fast switching

Single event effect (SEE) hardened

Low total gate charge

Simple drive requirements

Hermetically sealed

Ceramic package

Light weight

Surface mount

ESD rating: class 2 per MIL-STD-750, Method 1020

Potential Applications

SMD – 0.5

•

DC-DC converter

Motor drives

Electric propulsion

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 88.6 MeV·cm²/mg. Their combination of low R_DS(on)and faster switching times reduces the

power losses and increases power density in today’s high speed switching applications such as DC-DC

converters and motor controllers. These devices retain all of the well-established advantages of MOSFETs such

as voltage control, fast switching and temperature stability of electrical parameters.

Ordering Information

Table 1

Ordering options

Part number

IRHNJ9A7234

Package

Screening Level

COTS

TID Level

SMD-0.5

100 krad(Si)

300 krad(Si)

100 krad(Si)

300 krad(Si)

JANSR2N7649U3

IRHNJ9A3234

SMD-0.5

JANS

SMD-0.5

COTS

JANSF2N7649U3

IRHNJC9A7234

JANSR2N7649U3C

IRHNJC9A3234

JANSF2N7649U3C

SMD-0.5

JANS

SMD-0.5 (Ceramic Lid)

COTS

JANS

COTS

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 15

www.infineon.com/irhirel

2022-05-09

12 3 4 5 6 7...15

中文翻译

下载PDF

与IRHNJ9A3234相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ9A3234SCS	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
IRHNJ9A7034	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNJ9A7034SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNJ9A7130	INFINEON	获取价格	RF Power Field-Effect Transistor
IRHNJ9A7130B	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ9A7130SCS	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ9A7130SCSB	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ9A7234	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ9A7234SCS	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJC9A3034	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-

与IRHNJ9A3234相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNJ9A3234

IRHNJ9A3234 数据手册

与IRHNJ9A3234相关器件

与IRHNJ9A3234相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNJ9A3234

IRHNJ9A3234 数据手册

与IRHNJ9A3234相关器件

与IRHNJ9A3234相关文章

您还可以找

您在本页遇到什么问题？