PD-97843
IRHNJ9A7130
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
TECHNOLOGY
R
9
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNJ9A7130
IRHNJ9A3130
100 kRads (Si)
300 kRads (Si)
35A
35A
34m
34m
SMD-0.5
Description
Features
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic package
IR HiRel R9technology provides superior power MOSFETs for
space applications. These devices have improved immunity
to Single Event Effect (SEE) and have been characterized
for useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2). Their combination of low RDS(on)
and faster switching times reduces the power losses and
increases power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
Light Weight
Surface Mount
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
Pre-Irradiation
Units
35
22
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
A
140
75
IDM
Pulsed Drain Current
W
W/°C
V
PD @TC = 25°C
Maximum Power Dissipation
0.6
Linear Derating Factor
± 20
58
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
35
7.5
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
13
-55 to + 150
TSTG
Storage Temperature Range
Package Mounting Surface Temperature
Weight
°C
g
300 (for 5s)
1.0 (Typical)
For Footnotes, refer to the page 2.
1
2016-11-09