Datasheet > IRHNJ9A3130

IRHNJ9A3130

更新时间： 2024-11-24 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	388K
描述
Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad TID, COTS

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IRHNJ9A3130 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.76	Base Number Matches：	1

IRHNJ9A3130 数据手册

PD-97843

IRHNJ9A7130

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHNJ9A7130

IRHNJ9A3130

100 kRads (Si)

300 kRads (Si)

35A

34m

SMD-0.5

Description

Features

 Low RDS(on)

 Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic package

IR HiRel R9technology provides superior power MOSFETs for

space applications. These devices have improved immunity

to Single Event Effect (SEE) and have been characterized

for useful performance with Linear Energy Transfer (LET)

up to 90MeV/(mg/cm²). Their combination of low RDS(on)

and faster switching times reduces the power losses and

increases power density in today’s high speed switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

140

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

0.6

Linear Derating Factor

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

1.0 (Typical)

For Footnotes, refer to the page 2.

2016-11-09

12 3 4 5 6 7...9

中文翻译

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与IRHNJ9A3130相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ9A3130SCS	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
IRHNJ9A3234	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
IRHNJ9A3234SCS	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad
IRHNJ9A7034	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNJ9A7034SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNJ9A7130	INFINEON	获取价格	RF Power Field-Effect Transistor
IRHNJ9A7130B	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ9A7130SCS	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ9A7130SCSB	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ9A7234	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad

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