Datasheet > IRHNJ6S7230

IRHNJ6S7230

更新时间： 2024-03-25 22:02:01

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	426K
描述
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS

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IRHNJ6S7230 数据手册

PD-97857

IRHNJ6S7230

200V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

TECHNOLOGY

Product Summary

Part Number

IRHNJ6S7230

IRHNJ6S3230

Radiation Level RDS(on)

I_D

100 kRads(Si)

300 kRads(Si)

16A

0.13

SMD-0.5

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

IR HiRel R6 S-line technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

60 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

0.6

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

±20

V_GS

E_AS

I_AR

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

8.6

-55 to + 150

T_STG

°C

300 (for 5s)

1.0 (Typical)

Weight

For Footnotes, refer to the page 2.

2017-04-27

12 3 4 5 6 7...9

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