Datasheet > IRHNJ6S7230

IRHNJ6S7230

更新时间： 2024-11-28 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	426K
描述
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHNJ6S7230 数据手册

PD-97857

IRHNJ6S7230

200V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

TECHNOLOGY

Product Summary

Part Number

IRHNJ6S7230

IRHNJ6S3230

Radiation Level RDS(on)

I_D

100 kRads(Si)

300 kRads(Si)

16A

0.13

SMD-0.5

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

IR HiRel R6 S-line technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

60 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

0.6

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

±20

V_GS

E_AS

I_AR

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

8.6

-55 to + 150

T_STG

°C

300 (for 5s)

1.0 (Typical)

Weight

For Footnotes, refer to the page 2.

2017-04-27

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHNJ6S7230相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ6S7230SCS	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ6S7234	INFINEON	获取价格	Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr
IRHNJ6S7234SCS	INFINEON	获取价格	Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr
IRHNJ7130	INFINEON	获取价格	100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
IRHNJ7130B	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNJ7130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me
IRHNJ7130SCS	INFINEON	获取价格	Rad hard, 100V, 9.1A, single, N-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ7230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ7330SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ7330SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 5A I(D), 400V, 1.39ohm, 1-Element, N-Channel, Silicon, Meta

与IRHNJ6S7230相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNJ6S7230

IRHNJ6S7230 数据手册

与IRHNJ6S7230相关器件

与IRHNJ6S7230相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNJ6S7230

IRHNJ6S7230 数据手册

与IRHNJ6S7230相关器件

与IRHNJ6S7230相关文章

您还可以找

您在本页遇到什么问题？