是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.78 | 雪崩能效等级(Eas): | 150 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 4.5 A |
最大漏源导通电阻: | 1.65 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IRHNJ7430SESCSPBF | INFINEON | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.65ohm, 1-Element, N-Channel, Silicon, Me |
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IRHNJ8130 | INFINEON | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
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IRHNJ8130SCS | INFINEON | Power Field-Effect Transistor, |
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IRHNJ8230 | INFINEON | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
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IRHNJ9130 | INFINEON | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
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IRHNJ9130A | INFINEON | Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 kr |
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